Group III nitride compound semiconductor device

Details Group III nitride compound semiconductor device Group III nitride compound semiconductor device

2006-08-22

2006-08-22

Fahmy, Wael M. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

C257S079000, C257S094000, C257S098000, C257S103000

Reexamination Certificate

active

07095059

ABSTRACT:
The present invention provides a Group III nitride compound semiconductor device in which the amount of a current allowed to be applied on a p-type pad electrode can be increased.That is, in the Group III nitride compound semiconductor device according to the present invention, a portion of a translucent electrode coming in contact with a circumferential surface of the p-type pad electrode is formed as a thick port ion to thereby increase the area of contact between the circumferential surface and the translucent electrode to thereby increase the current allowed to be applied on the p-type pad electrode. In addition, the use of the thick portion prevents cracking from occuring between the translucent electrode and the circumferential surface of the pad electrode.

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