Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2005-01-11
2005-01-11
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S079000, C257S094000
Reexamination Certificate
active
06841808
ABSTRACT:
An AlN layer having a surface of a texture structure is formed on a sapphire substrate. Then, a growth suppressing material layer is formed on the AlN layer so that the AlN layer is partially exposed to the outside. Then, group III nitride compound semiconductor layers are grown on the AlN layer and on the growth suppressing material layer by execution of an epitaxial lateral overgrowth method. Thus, a group III nitride compound semiconductor device is produced. An undercoat layer having convex portions each shaped like a truncated hexagonal pyramid is formed on a substrate. Group III nitride compound semiconductor layers having a device function are laminated successively on the undercoat layer.
REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6194742 (2001-02-01), Kern et al.
patent: 6325850 (2001-12-01), Beaumont et al.
patent: 6348096 (2002-02-01), Sunakawa et al.
patent: 07-267796 (1995-10-01), None
patent: 09-199759 (1997-07-01), None
patent: 09-232629 (1997-09-01), None
patent: 10-004210 (1998-01-01), None
patent: 10-135575 (1998-05-01), None
patent: 10-312971 (1998-11-01), None
patent: 11-191639 (1999-07-01), None
patent: wo9920816 (1999-04-01), None
Asami Shinya
Asami Shizuyo
Chiyo Toshiaki
Ito Jun
Senda Masanobu
Hu Shouxiang
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
LandOfFree
Group III nitride compound semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III nitride compound semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III nitride compound semiconductor device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3435773