Group III nitride compound semiconductor light-emitting device

Details Group III nitride compound semiconductor light-emitting device Group III nitride compound semiconductor light-emitting device

2005-03-01

2005-03-01

Baumeister, Bradley (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S103000, C257S190000, C977S726000

Reexamination Certificate

active

06861663

ABSTRACT:
A buffer layer of aluminum nitride (AlN) about 25 nm thick is provided on a sapphire substrate. An n+layer of a high carrier density, which is about 4.0 μm thick and which is made of GaN doped with silicon (Si), is formed on the buffer layer. An intermediate layer of non-doped InxGa1−xN (0<x<1) about 3000 Å thick is formed on the high carrier density n+layer. Then, an n-type clad layer of GaN about 250 Å thick is laminated on the intermediate layer. Further, three well layers of Ga0.8In0.2N about 30 Å thick each and two barrier layers of GaN about 70 Å thick each are laminated alternately on the n-type clad layer to thereby form a light-emitting layer of a structure with two multilayer quantum well (MQW) cycles.

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