Group III nitride compound semiconductor device

Details Group III nitride compound semiconductor device Group III nitride compound semiconductor device

2005-07-26

2005-07-26

Wille, Douglas (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S103000

Reexamination Certificate

active

06921923

ABSTRACT:
An InGaN layer is formed on an undercoat layer of the same composition as the InGaN layer. The composition of the undercoat layer may be changed continuously or stepwise.

REFERENCES:
patent: 5523589 (1996-06-01), Edmond et al.
patent: 5656832 (1997-08-01), Ohba et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6072189 (2000-06-01), Duggan
patent: 6258617 (2001-07-01), Nitta et al.

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