Group III nitride compound semiconductor device and method...

Details Group III nitride compound semiconductor device and method... Group III nitride compound semiconductor device and method...

2006-01-03

2006-01-03

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S079000, C257S096000

Reexamination Certificate

active

06982435

ABSTRACT:
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

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