Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2005-09-12
2008-12-09
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S615000, C257SE33006, C438S481000
Reexamination Certificate
active
07462867
ABSTRACT:
A sapphire substrate1is etched so that each trench has a width of 10 μm and a depth of 10 μm were formed at 10 μm of intervals in a stripe pattern. Next, an AlN buffer layer2having a thickness of approximately 40 nm is formed mainly on the upper surface and the bottom surface of the trenches of the substrate1.Then a GaN layer3is formed through vertical and lateral epitaxial growth. At this time, lateral epitaxial growth of the buffer layer21,which was mainly formed on the upper surface of the trenches, filled the trenches and thus establishing a flat top surface. The portions of the GaN layer3formed above the top surfaces of the mesas having a depth of 10 μm exhibited significant suppression of threading dislocation in contrast to the portions formed above the bottoms of the trenches.
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PCT Form 210 (PCT/JP01/02695).
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PCT Form 210 (PCT/JP01/01396).
PCT Form 210 (PCT/JP01/01178).
PCT Form 210 (PCT/JP01/01663).
PCT Form 210 (PCT/JP00/09121).
PCT Form 210 (PCT/JP00/09220).
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PCT Forms 338 and 409 (IPER) (PCT/JP01/01663).
PCT Forms 338 and 409 (IPER) (PCT/JP00
McGinn IP Law Group PLLC
Menz Douglas M.
Such Matthew W
Toyoda Gosei Co,., Ltd.
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