Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-03-21
2006-03-21
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S615000, C257SE33028
Reexamination Certificate
active
07015515
ABSTRACT:
After one of layers constituting a superlattice structure is formed by an MOCVD method, NH3gas is circulated together with H2gas as a carrier gas to thereby perform a purge step. After the purge step, a next layer is formed.
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Asai Makoto
Kaneyama Naoki
Sawazaki Katsuhisa
Taki Tetsuya
Uemura Toshiya
McGinn IP Law Group PLLC
Smoot Stephen W.
Toyoda Gosei Co,., Ltd.
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