Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-10-07
2009-08-18
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S101000, C257S103000, C257S079000, C257SE33010
Reexamination Certificate
active
07576363
ABSTRACT:
In a group III nitride compound semiconductor light emitting device comprising an n-type semiconductor layer, a p-type semiconductor layer having a superlattice structure in which a first layer comprising at least Al and a second layer having a different composition from that of the first layer are laminated repetitively, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein an Al composition of the first layer which is the closest to the active layer is set to be lower than that of each of the other first layers, and wherein a doping amount of a p-type impurity in the first layer which is the closest to the active layer is set to be smaller than that of the p-type impurity of each of the other first layers or non-doped.
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Reshchikov et al. Defect Reduction in Heavily Mg-Doped GaN, MRS Internet J. Nitride Semicond. Res. 4S1, G11.8 (1999).
Ikemoto Yuhei
Nakai Masahito
Sawazaki Katsuhisa
Uemura Toshiya
McGinn IP Law Group PLLC
Monbleau Davienne
Reames Matthew
Toyoda Gosei Co,., Ltd.
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