Group III nitride compound semiconductor light-emitting device

Details Group III nitride compound semiconductor light-emitting device Group III nitride compound semiconductor light-emitting device

2007-12-04

2007-12-04

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S072000, C257S069000

Reexamination Certificate

active

09845336

ABSTRACT:
A semiconductor laminate containing a light-emitting layer is etched to reveal a side surface. A reflection surface opposite to the side surface of the semiconductor laminate is provided in one and the same chip as the semiconductor laminate. A groove may be formed in the laminate by a dicing saw, and an outer side surface of the groove may be provided as the reflection surface.

REFERENCES:
patent: 5753940 (1998-05-01), Komoto
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5814533 (1998-09-01), Shakuda
patent: 5838029 (1998-11-01), Shakuda
patent: 5974069 (1999-10-01), Tanaka et al.
patent: 5998925 (1999-12-01), Shimizu et al.
patent: 6023076 (2000-02-01), Shibata
patent: 6087681 (2000-07-01), Shakuda
patent: 6111277 (2000-08-01), Ikeda
patent: 6274891 (2001-08-01), Tanaka et al.
patent: 6288416 (2001-09-01), Koike et al.
patent: 6298079 (2001-10-01), Tanaka et al.
patent: 6531719 (2003-03-01), Shibata et al.
patent: 6623998 (2003-09-01), Shibata et al.
patent: 6917059 (2005-07-01), Uemura
patent: 2001/0045562 (2001-11-01), Uemura et al.
patent: 2001/0050376 (2001-12-01), Shibata et al.
patent: 2002/0030201 (2002-03-01), Uemura
patent: 2004/0129948 (2004-07-01), Uemura
patent: 2005/0205890 (2005-09-01), Uemura
patent: 11-273571 (1999-10-01), None
patent: 11330565 (1999-11-01), None
patent: 2001-024222 (2001-01-01), None
Computer Generated English translation of Ishikawa's JP 11-330565A.
Computer Generated English translation of Ishikawa's JP 11-330565A, 2006.

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