Group III nitride compound semiconductor light-emitting device

Details Group III nitride compound semiconductor light-emitting device Group III nitride compound semiconductor light-emitting device

2006-04-04

2006-04-04

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S097000

Reexamination Certificate

active

07023020

ABSTRACT:
A groove is formed in a semiconductor laminate portion containing a light-emitting layer so that the groove starts from a light emission observation surface of the semiconductor laminate portion to reach at least the light-emitting layer. In such a manner, light is released from an opening portion of the groove.

REFERENCES:
patent: 5587593 (1996-12-01), Koide et al.
patent: 5700713 (1997-12-01), Yamazaki et al.
patent: 5814533 (1998-09-01), Shakuda
patent: 5838029 (1998-11-01), Shakuda
patent: 5974069 (1999-10-01), Tanaka et al.
patent: 6087681 (2000-07-01), Shakuda
patent: 6274891 (2001-08-01), Tanaka et al.
patent: 6298079 (2001-10-01), Tanaka et al.
patent: 6342404 (2002-01-01), Shibata et al.
patent: 6541798 (2003-04-01), Koike et al.
patent: 6617061 (2003-09-01), Koike et al.
patent: 6674098 (2004-01-01), Niki et al.
patent: 6735230 (2004-05-01), Tanabe et al.
patent: 50-105286 (1975-08-01), None
patent: 51-18788 (1976-06-01), None
patent: 03-129882 (1991-06-01), None
patent: 04-087380 (1992-03-01), None
patent: 08-186287 (1996-07-01), None
patent: 10-173229 (1998-06-01), None
patent: 2001-024222 (2001-01-01), None
Japanese Office Action dated Jan. 18, 2005 with English translation.

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