Group III nitride compound semiconductor device

Details Group III nitride compound semiconductor device Group III nitride compound semiconductor device

2006-05-09

2006-05-09

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE21508, C257SE21511, C257SE23124, C257SE25020, C257SE33059, C438S114000, C438S033000, C438S108000, C438S112000, C438S127000

Reexamination Certificate

active

07042089

ABSTRACT:
An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 μm.

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