Group III nitride compound semiconductor light-emitting device

Details Group III nitride compound semiconductor light-emitting device Group III nitride compound semiconductor light-emitting device

2006-07-14

2010-06-15

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S014000, C257SE25019, C372S046010

Reexamination Certificate

active

07737431

ABSTRACT:
A group III nitride compound semiconductor light-emitting device according to the present invention includes: an active layer (105) comprised of a group III nitride compound semiconductor; a current blocking layer (108) which is formed on the active layer (105) and has a striped aperture (108a); a superlattice layer (p-type layer109) which buries the aperture (108a) and is comprised of a group III nitride compound semiconductor including Al; and a cladding layer (110) which is formed on the superlattice layer and is comprised of a group III nitride compound semiconductor including Al. When an average Al composition ratio of the superlattice layer is represented as x1 and an average Al composition ratio of the cladding layer (110) is represented as x2, it is represented as x1<x2.

REFERENCES:
patent: 2002/0105986 (2002-08-01), Yamasaki
patent: 2005/0074973 (2005-04-01), Ouchi et al.
patent: 2000-223786 (2000-08-01), None
patent: 2002-190635 (2002-07-01), None
patent: 2003-078215 (2003-03-01), None
patent: 2003-115641 (2003-04-01), None
patent: 2005-019835 (2005-01-01), None

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