LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Incoherent light emitter structure

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Group III nitride semiconductor laser device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride semiconductor light emitting device,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III nitride semiconductor light-emitting device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride semiconductor light-emitting device having...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III nitride semiconductor light-emitting device,...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III nitride semiconductor optical device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III nitride substrate, semiconductor device comprising...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III nitride-based compound semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III-nitride based resonant cavity light emitting...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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Group III-nitride light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III-nitride light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III-nitride on Si using epitaxial BP buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III-V compound semiconductor and light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

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Group III-V element-based LED having ESD protection capacity

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III-V nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

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Group III-V nitride semiconductor light-emitting device...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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Group III-V nitride series semiconductor substrate and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III-V nitride series semiconductor substrate and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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Group III-V nitride-based semiconductor substrate and group...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile

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Group III-V type nitride compound semiconductor device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

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