Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2005-09-06
2005-09-06
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S098000, C257S099000, C257S100000, C257S103000
Reexamination Certificate
active
06940100
ABSTRACT:
A semiconductor light-emitting device of Group III-V compound semiconductors includes a quantum well layer, which is formed over a substrate and includes a barrier layer and a well layer that are alternately stacked one upon the other. The band gap of the well layer is narrower than that of the barrier layer. The well layer contains indium and nitrogen, while the barrier layer contains aluminum and nitrogen. In this structure, a tensile strain is induced in the barrier layer, and therefore, a compressive strain induced in the quantum well layer can be reduced. As a result, a critical thickness, at which pits are created, can be increased.
REFERENCES:
patent: 5740192 (1998-04-01), Hatano et al.
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 6608330 (2003-08-01), Yamada
patent: 61-96757 (1994-07-01), None
patent: 09-116225 (1997-05-01), None
patent: 10-065271 (1998-03-01), None
patent: 10-173232 (1998-06-01), None
patent: 10-242585 (1998-09-01), None
patent: 10-321965 (1998-12-01), None
patent: 11-340580 (1999-12-01), None
Shuji Nakamura et al., “InGaN/GaN/AIGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices,” Jpn. J. Appl. Phys., vol. 36(1997), part 2 No. 12A, pp. L1568-L1571, Dec. 1, 1997.
Y. Chen et al. “Pit Formation is GaInN quantum wells,” Applied Physics Letters, vol. 72, No. 6, pp. 710-712, Feb. 9, 1998.
S. Nakamura et al., “Room-temperature continuous-wave operation of InGaN multi-quantum well structure laser diodes with a lifetime of 27 hours”, Applied Physics Letters, vol. 70, No. 11, pp. 1417-1419, Mar. 17, 1997.
Nakamura et al., “InGaN-Based Multi-Quantum-Well Structure Laser Diodes”, Japan J. Appl. Phys., vol. 35, Part 1, 1B,pp. L74-L76, Jan. 15, 1996.
Nakamura et al., “InGaN Multi-Quantum-Well Structure Laser Diodes with Cleared Mirror Cavity Facets”, pp. L217-L220, Feb. 15, 1996, Jpn. J. Appl. Phys., vol. 35, part 2, 2B.
Notice of Reasons of Rejection, Patent Application No.: 11-373224, Mailing No. 056983, Mailing Date: Feb. 26, 2002.
Notice of Reasons of Rejection with English Translation, Patent Application No.: 11-373224, Mailing No. 166204, Mailing Date: May 28, 2002.
Ban Yuzaburo
Hasegawa Yoshiaki
Ishibashi Akihiko
Kidoguchi Isao
Suzuki Masakatsu
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Tran Minhloan
Tran Tan
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