LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Incoherent light emitter structure

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

II-VI compound semiconductor based light emitting device having

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

II-VI group compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

II-VI laser diodes with short-period strained-layer superlattice

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II-VI semiconductor device with BeTe buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II-VI semiconductor device with BeTe buffer layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

II-VI/III-V layered construction on InP substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

II-VI/III-V layered construction on InP substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

II/VI-compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III group nitride compound semiconductor luminescent element

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

III group nitride system compound semiconductor light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

III nitride semiconductor substrate for ELO

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

III-N compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III-nitride based semiconductor structure with multiple...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material

III-nitride compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III-nitride compound semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor

III-nitride compound semiconductor light emitting device...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III-nitride device with improved layout geometry

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

III-nitride device with improved layout geometry