Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2007-03-12
2010-12-07
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S609000, C257S610000, C257S611000
Reexamination Certificate
active
07847313
ABSTRACT:
A group III-V nitride-based semiconductor substrate is formed of a group III-V nitride-based semiconductor single crystal containing an n-type impurity. The single crystal has a periodical change in concentration of the n-type impurity in a thickness direction of the substrate. The periodical change has a minimum value in concentration of the n-type impurity not less than 5×1017cm−3at an arbitrary point in plane of the substrate.
REFERENCES:
patent: 2002/0121646 (2002-09-01), Khare et al.
patent: 2003/0205717 (2003-11-01), Khare et al.
patent: 2004/0124500 (2004-07-01), Kawagoe
patent: 2004/0262630 (2004-12-01), Kitaoka et al.
patent: 2006/0075959 (2006-04-01), Matsubara et al.
patent: 2009/0166606 (2009-07-01), Lee
patent: 63-102769 (1988-07-01), None
patent: 08-060369 (1996-03-01), None
patent: 11-251253 (1999-09-01), None
patent: 2001-192300 (2001-07-01), None
patent: 2002-335011 (2002-11-01), None
“Periodic.” Def. 2. Webster's II New Riverside University Dictionary. 1994.
Yuichi Oshima et al, Preparation of Freestanding Gan Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation, Japanese J. Application Phys. vol. 42 (2003) pp. L1-L3, dated Jan. 15, 2003.
Hitachi Cable Ltd.
Scully , Scott, Murphy & Presser, P.C.
Skyles Tifney L
Weiss Howard
LandOfFree
Group III-V nitride-based semiconductor substrate and group... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Group III-V nitride-based semiconductor substrate and group..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Group III-V nitride-based semiconductor substrate and group... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4159419