Group III-V nitride series semiconductor substrate and...

Details Group III-V nitride series semiconductor substrate and... Group III-V nitride series semiconductor substrate and...

2008-01-29

2008-01-29

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S233000

Reexamination Certificate

active

11033469

ABSTRACT:
The group III-V nitride series semiconductor substrate has good-product yield when the band-edge peak light-emission intensity ratio α=N1/N2is α<1, where N1is a band-edge peak light-emission intensity at an arbitrary photoluminescence measurement position on the front side of the substrate, and N2is a band-edge peak light-emission intensity on the back side of the substrate corresponding to the photoluminescence measurement position.

REFERENCES:
patent: 5939735 (1999-08-01), Tsutsui et al.
patent: 2002/0185054 (2002-12-01), Xu et al.
patent: 2003/0030053 (2003-02-01), Kawakami et al.
patent: 2005/0093101 (2005-05-01), Matsumoto
patent: 11-251253 (1999-09-01), None

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