Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1996-11-27
2000-02-08
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257190, 257615, 438 46, H01L 3300
Patent
active
060230770
ABSTRACT:
A Group III-V compound semiconductor of high crystallinity and high quality, and a light-emitting device using the same, which has high luminous efficacy are obtained by providing a specific ground layer composed of at least three layers between the luminous layer and substrate. A light-emitting device capable of inhibiting formation of a misfit dislocation on the interface of the luminous layer and easily emitting light having a longer wavelength is also obtained by controlling the AlN mixed crystal ratio of at least one layer between the luminous layer and the substrate within a specific range and controlling the lattice constant of the luminous layer to a value larger than that of the ground layer, the luminous layer having a compressive strain formed in contact with the ground layer.
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patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5583879 (1996-12-01), Yamazaki et al.
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"Room-temperature violet stimulated emission from optically pumped ALGaN/GaLnN double heterostructure", by H. Amano et al., Appl. Phys. Lett. 64 (11) Mar. 14, 1994 pp. 1377-1379.
"Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes", by S. Nakamura et al., Jpn. J. Appl. Phys. vol. 34 (1995) pp. L1332-L1335, Part 2, No. 10B, Oct. 15, 1995.
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Inui Katsumi
Iyechika Yasushi
Ono Yoshinobu
Takada Tomoyuki
Prenty Mark V.
Sumitomo Chemical Company Limited
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