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DRAM cell having storage capacitor contact self-aligned to bit l

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell having storage capacitor contact self-aligned to...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell having tunnel shaped structure and formation process t

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell layout for node capacitance enhancement

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Dram cell pair and dram memory cell array

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell structure capable of high integration and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell structure with buried surrounding capacitor and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell structure with tunnel barrier

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with a double-crown shaped capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with a fork-shaped capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with a multiple fin-shaped structure capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Dram cell with a multiple mushroom-shaped capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with a rugged stacked trench (RST) capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with buried collar and self-aligned buried strap

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with enhanced capacitor area and the method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with enhanced SER immunity

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with grooved transfer device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with high integration density

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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DRAM cell with stacked capacitor self-aligned to bitline

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Dram cell with three-sided-gate transfer device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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