Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-12
2011-07-12
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S296000
Reexamination Certificate
active
07977726
ABSTRACT:
A dynamic random access memory (DRAM) cell and the method of manufacturing the same are provided. The DRAM cell includes a cell transistor and a cell capacitor. The cell capacitor includes a first, second and third dielectric layer, and a first, second and third capacitor electrode. The first dielectric layer is located on a first capacitor electrode. The second capacitor electrode is located on top of the first dielectric layer. The second dielectric layer is located on the second capacitor electrode. The third capacitor electrode is located on the second dielectric layer and is electrically connected with the drain. The third dielectric layer is located between the third capacitor electrode and the gate for isolating the gate from the third capacitor electrode.
REFERENCES:
patent: 4864464 (1989-09-01), Gonzalez
patent: 6569717 (2003-05-01), Murade
patent: 6847076 (2005-01-01), Tsou
patent: 1027884 (1998-01-01), None
Menz Douglas M
Muncy Geissler Olds & Lowe, PLLC
Taiwan Semiconductor Manufacturing Co. Ltd.
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