DRAM cell with a double-crown shaped capacitor

Details DRAM cell with a double-crown shaped capacitor DRAM cell with a double-crown shaped capacitor

1998-02-19

1999-12-21

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257309, H01L 27108

Patent

active

060052694

ABSTRACT:
A double-crown shaped capacitor of a dynamic random access memory cell is disclosed. The capacitor includes a first crown-shaped doped polysiliocn region (118) formed over a semiconductor substrate (110), wherein the first crown-shaped doped polysiliocn region communicates to the semiconductor substrate. The capacitor also includes a second crown-shaped doped polysilicon region (128) formed over the semiconductor substrate, wherein the inner sidewall of the second crown-shaped doped polysilicon region abuts on the outer sidewall of aid first crown-shaped doped polysiliocn region. Finally, the capacitor includes a dielectric layer (136) covering the first crown-shaped doped polysiliocn region and the second crown-shaped doped polysilicon region, and includes a conductive layer (138) formed on the dielectric layer.

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