DRAM cell with a multiple fin-shaped structure capacitor

Details DRAM cell with a multiple fin-shaped structure capacitor DRAM cell with a multiple fin-shaped structure capacitor

1998-06-03

2000-05-16

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257308, 257309, 257307, 257306, 257311, 438243, 438244, 438253, 438386, 438387, 438388, 438389, 438398, H01L 27108

Patent

active

060640855

ABSTRACT:
The present invention discloses a novel multiple fin-shaped capacitor for use in semiconductor memories. The capacitor has a plurality of horizontal fins and a crown shape. The capacitor structure comprises a bottom storage electrode. The bottom storage electrode comprises of a plurality of horizontal fins and a crown shape, wherein said crown shape includes two vertical pillars, and said plurality of horizontal fins extend outside from an external surface of said crown shape. A second dielectric layer is formed on the surface of the bottom storage electrode layer. A top storage electrode layer is formed along the surface of second dielectric layer. By including horizontal fins and vertical pillars, the surface area of the capacitor is significantly increased, resulting in increased capacitance.

REFERENCES:
patent: 5766994 (1998-06-01), Tseng
patent: 5801413 (1998-09-01), Pan
patent: 5804852 (1998-09-01), Yang et al.
patent: 5835337 (1998-11-01), Watanabe et al.
patent: 5889301 (1999-03-01), Tseng
patent: 5903024 (1999-05-01), Hsu
patent: 5903430 (1999-05-01), Takaishi
patent: 5909045 (1999-06-01), Chao
patent: 5912485 (1999-06-01), Chao

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