DRAM cell structure capable of high integration and...

Details DRAM cell structure capable of high integration and... DRAM cell structure capable of high integration and...

2005-12-13

2005-12-13

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S302000

Reexamination Certificate

active

06974988

ABSTRACT:
A DRAM cell structure capable of high integration includes a trench-type capacitor formed in a lower region of a trench, the trench being made vertically and cylindrically in a silicon substrate, and a transistor being formed vertically and cylindrically over the trench-type capacitor, the transistor being connected to the capacitor. A method for fabricating a DRAM cell structure capable of high integration includes the steps of (a) forming a trench vertically and cylindrically in a silicon substrate, (b) forming a trench-type capacitor having a cylindrical plate electrode and a storage node electrode on a lower region of the trench, (c) forming a vertical cylindrical transistor cell structure connected to the trench-type capacitor on an upper region of the trench.

REFERENCES:
patent: 5291438 (1994-03-01), Witek et al.
patent: 6355518 (2002-03-01), Wu et al.
patent: 6552382 (2003-04-01), Wu

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