Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000
Reexamination Certificate
active
06974991
ABSTRACT:
In a DRAM cell having a trench, a cell capacitor and a cell transistor, a node conducting element connects the cell capacitor to the cell transistor and a collar is disposed about the node conducting element. The collar is disposed in the substrate at least partially, up to entirely outside of the trench. Because the collar is disposed in the substrate outside of the trench, it does not restrict the size of the trench opening. This enables sub-100 nm trenches, using techniques which are compatible with contemporary DRAM process steps. A strap is embedded into a top surface of the collar.
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Bronner Gary Bela
Cheng Kangguo
Divkaruni Ramachandra
Gluschenkov Oleg G.
Radens Carl John
Cohn Howard M.
International Business Machines Corp.
Landau Matthew C
Schnurmann H. Daniel
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