Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-29
2000-10-24
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257534, H01L 2968, H01L 27108, H01L 2700
Patent
active
061371319
ABSTRACT:
The capacitor includes a first storage node formed over a semiconductor wafer. The first storage node has a plurality of mushroom-shape structures. The plurality of mushroom-shape structures are randomly arranged on the first storage node to increase the area of the first storage node. A dielectric layer conformally covers the first storage node. A second storage node is formed on the dielectric layer.
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Monin, Jr. Donald L.
Texas Instrumants - Acer Incorporated
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