Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-03
2005-05-03
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06888187
ABSTRACT:
A memory cell that has first and second fully depleted transfer devices each having a body region and first and second diffused electrodes. The cell has a differential storage capacitor having at least one node abutting and in electrical contact with one of the first and second diffused electrodes of each of the transfer devices. The storage capacitor has a primary capacitance and a plurality of inherent capacitances, wherein the primary capacitance has a capaictive value that is at least approximately five times greater than that of the plurality of inherent capacitances.
REFERENCES:
patent: 4103342 (1978-07-01), Miersch et al.
patent: 4641165 (1987-02-01), Iizuka et al.
patent: 4686552 (1987-08-01), Teng et al.
patent: 4888733 (1989-12-01), Mobley
patent: 4927779 (1990-05-01), Dhong et al.
patent: 5134616 (1992-07-01), Barth, Jr. et al.
patent: 5241211 (1993-08-01), Tashiro
patent: 5329479 (1994-07-01), Ota et al.
patent: 5567962 (1996-10-01), Miyawaki et al.
patent: 5606189 (1997-02-01), Adan
patent: 5780335 (1998-07-01), Henkels et al.
patent: 5943279 (1999-08-01), Wada
patent: 6064588 (2000-05-01), Crafts
patent: 6101117 (2000-08-01), Tiwari
patent: 6198151 (2001-03-01), Wada
patent: 6246083 (2001-06-01), Noble
patent: 2595160 (1987-09-01), None
Choi Y.K. et al. “30 nm ultra-thin-body SOI MOSFET with selective deposied Ge raised S/D”, Jun. 2000. 58th Dev Res Conf (DRC). pp. 23-24.
Brown Jeffrey S.
Fried David M.
Nowak Edward J.
Rainey Beth Ann
International Business Machines - Corporation
Walsh Robert A.
Weiss Howard
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