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User programmable redundant memory

Static information storage and retrieval – Read/write circuit – Bad bit
Patent

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User RAM flash clear

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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User selectable banks for DRAM

Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate

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User selectable banks for DRAM

Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate

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User selectable banks for DRAM

Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate

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User selectable banks for DRAM

Static information storage and retrieval – Addressing
Reexamination Certificate

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User selectable cell programming

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Using a low drain bias during erase verify to ensure...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Using a negative gate erase to increase the cycling...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Using a negative gate erase voltage applied in steps of...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Using an MOS select gate for a phase change memory

Static information storage and retrieval – Read only systems – Semiconductive
Reexamination Certificate

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Using an output of a leak detector which detects leakage from a

Static information storage and retrieval – Read/write circuit – Differential sensing
Patent

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Using dedicated read output path to reduce unregistered read...

Static information storage and retrieval – Addressing – Using selective matrix
Reexamination Certificate

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Using delayed electrical pulses with magneto-resistive devices

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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Using FeRam/MRAM cells having a high degree of flexibility...

Static information storage and retrieval – Systems using particular element – Ferroelectric
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Using floating gate devices as select gate devices for NAND flas

Static information storage and retrieval – Floating gate – Particular connection
Patent

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Using higher current to read a triggered phase change memory

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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Using hot carrier injection to control over-programming in a...

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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Using isolated p-well transistor arrangements to avoid...

Static information storage and retrieval – Read/write circuit – Including signal clamping
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Using MLC flash as SLC by writing dummy data

Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate

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