Using FeRam/MRAM cells having a high degree of flexibility...

Details Using FeRam/MRAM cells having a high degree of flexibility... Using FeRam/MRAM cells having a high degree of flexibility...

2005-05-24

2005-05-24

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C257S306000

Reexamination Certificate

active

06898106

ABSTRACT:
A memory device is configured to guarantee a high degree of flexibility and a compact construction. To this end, the existing plate line device of the memory device which functions on the basis of a hysteresis process is configured to detect the state of a memory capacitor and hence, the information that is stored.

REFERENCES:
patent: 5487032 (1996-01-01), Mihara et al.
patent: 5644151 (1997-07-01), Izumi et al.
patent: 5744832 (1998-04-01), Wolters et al.
patent: 5978250 (1999-11-01), Chung et al.
patent: 5995407 (1999-11-01), Kamp
patent: 6094369 (2000-07-01), Ozawa et al.
patent: 6297986 (2001-10-01), Jae Kap

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