Using floating gate devices as select gate devices for NAND flas

Details Using floating gate devices as select gate devices for NAND flas Using floating gate devices as select gate devices for NAND flas

1996-06-18

1998-08-11

Nguyen, Viet Q.

Static information storage and retrieval

Floating gate

Particular connection

36518528, 36518505, 36518526, 36518501, G11C 1300, H01L 27115

Patent

active

057936773

ABSTRACT:
The present invention facilitates programming of selected floating gate devices while successfully inhibiting the programming of unselected devices, without the need for growing multiple thicknesses of oxides. The preferred embodiment of the present invention utilizes a multiple select gate device. In particular, the select gate device is preferably a dual floating gate device rather than the conventional transistor (or device functioning as a conventional transistor) used in the current Flash memory systems as a select gate device.

REFERENCES:
patent: 5126808 (1992-06-01), Montalvo et al.
patent: 5299162 (1994-03-01), Kim et al.
patent: 5319593 (1994-06-01), Wolstenholme
patent: 5464998 (1995-11-01), Hayakawa et al.
patent: 5546341 (1996-08-01), Suh et al.
IEICE Transactions On Electronics, vol. E78-C, No. 7, 1 Jul. 1995, pp. 818-824, XP000528812 Nobukata H et al: "A 65 NS 3 V-Only NAND-Flash Memory with New Verify Scheme and Folded Bit-Line Architecture".

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