Using an output of a leak detector which detects leakage from a

Details Using an output of a leak detector which detects leakage from a Using an output of a leak detector which detects leakage from a

1997-05-23

1998-06-02

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Differential sensing

36518907, 36518909, G11C 702

Patent

active

057611432

ABSTRACT:
In a semiconductor memory device, a dummy memory cell is formed on a semiconductor substrate in the same way as the memory cell is formed. A leak detecting means for detecting leakage from the dummy memory cell generates an output signal representing the amount of the leakage. A substrate-voltage generating means controls substrate voltage applied to the semiconductor substrate so as to reduce the amount of leakage from the memory cell in accordance with the output signal supplied to the substrate-voltage generating means by the leak detecting means.

REFERENCES:
patent: 4307307 (1981-12-01), Parekh
patent: 5592423 (1997-01-01), Tokami
patent: 5680357 (1997-10-01), Sung et al.

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