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2-bit/cell type nonvolatile semiconductor memory

Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate

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2-cell/1-bit type EPROM

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent

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2-D FIFO memory having full-width read/write capability

Static information storage and retrieval – Read/write circuit – Serial read/write
Reexamination Certificate

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2-port memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric
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2-terminal trapped charge memory device with voltage...

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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2-transistor floating-body dram

Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate

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2-write 3-read SRAM design using a 12-T storage cell

Static information storage and retrieval – Systems using particular element – Flip-flop
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21/2D Core memory

Static information storage and retrieval – Systems using particular element – Three-dimensional magnetic array
Patent

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21/2D core memory

Static information storage and retrieval – Systems using particular element – Three-dimensional magnetic array
Patent

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256 meg dynamic access memory

Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate

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256 Meg dynamic random access memory

Static information storage and retrieval – Powering
Reexamination Certificate

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256 Meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
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256 Meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
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256 Meg dynamic random access memory

Static information storage and retrieval – Systems using particular element – Multiaperture cell
Reexamination Certificate

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256 Meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate

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256 meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
Reexamination Certificate

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256 Meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
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256 Meg dynamic random access memory

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
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256 meg dynamic random access memory

Static information storage and retrieval – Format or disposition of elements
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256 Meg dynamic random access memory

Static information storage and retrieval – Addressing – Plural blocks or banks
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