Using higher current to read a triggered phase change memory

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Reexamination Certificate

active

08036013

ABSTRACT:
A phase change memory cell may be read by driving a current through the cell higher than its threshold current. A voltage derived from the selected column may be utilized to read a selected bit of a phase change memory. The read window or margin may be improved in some embodiments. A refresh cycle may be included at periodic intervals.

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U.S. Appl. No. 11/093,877, filed Mar. 30, 2005, Tyler Lowrey et al.,Using a Bit Specific Reference Level to Read a Memory.
U.S. Appl. No. 11/093,878, filed Mar. 30, 2005, Ward D. Parkinson et al.,Reading Phase Change Memories.
U.S. Appl. No. 11/093,709, filed Mar. 30, 2005, Ferdinando Bedeschi et al.,Detecting Switching of Access Elements of Phase Change Memory Cells.
U.S. Appl. No. 11/093,879, filed Mar. 30, 2005, Ferdinando Bedeschi et al.,Circuit for Reading Memory Cells.

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