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0.7V two-port 6T SRAM memory cell structure with single-bit-line

Static information storage and retrieval – Systems using particular element – Flip-flop
Patent

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1-transistor type DRAM cell, a DRAM device and manufacturing...

Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate

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1-transistor type DRAM cell, DRAM device and DRAM comprising...

Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate

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1P1N 2T gain cell

Static information storage and retrieval – Systems using particular element – Continuous cells
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1R1D MRAM block architecture

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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1T1C SRAM

Static information storage and retrieval – Systems using particular element – Capacitors
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1T1R resistive memory array with chained structure

Static information storage and retrieval – Systems using particular element – Resistive
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2-port memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric
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2-terminal trapped charge memory device with voltage...

Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate

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2-transistor floating-body dram

Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate

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2-write 3-read SRAM design using a 12-T storage cell

Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate

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21/2D Core memory

Static information storage and retrieval – Systems using particular element – Three-dimensional magnetic array
Patent

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21/2D core memory

Static information storage and retrieval – Systems using particular element – Three-dimensional magnetic array
Patent

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256 Meg dynamic random access memory

Static information storage and retrieval – Systems using particular element – Multiaperture cell
Reexamination Certificate

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2T dual-port DRAM in a pure logic process with...

Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate

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2T-1C ferroelectric random access memory and operation...

Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate

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2T2R-1T1R mix mode phase change memory array

Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate

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3-parameter switching technique for use in MRAM memory arrays

Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate

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3-parameter switching technique for use in MRAM memory arrays

Static information storage and retrieval – Systems using particular element – Magnetoresistive
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3-transistor OTP ROM using CMOS gate oxide antifuse

Static information storage and retrieval – Systems using particular element – Semiconductive
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