1T1R resistive memory array with chained structure

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S100000, C365S104000, C365S189040

Reexamination Certificate

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11121145

ABSTRACT:
A 1T1R resistive memory array comprised of chains of memory cells, where each memory cell is composed of a resistive element in parallel with a switch. Such chains of memory cells are non-volatile and provide for each of the memory cells to be randomly accessed.

REFERENCES:
patent: 5313418 (1994-05-01), Wada et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6473330 (2002-10-01), Ogiwara et al.
patent: 6583003 (2003-06-01), Hsu et al.
patent: 6841833 (2005-01-01), Hsu et al.

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