2T dual-port DRAM in a pure logic process with...

Details 2T dual-port DRAM in a pure logic process with... 2T dual-port DRAM in a pure logic process with...

2001-02-13

2002-09-17

Tran, M. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S222000

Reexamination Certificate

active

06452834

ABSTRACT:

FIELD OF THE INVENTION
The invention relates to computer memory, particularly to dynamic random access memory (DRAM).
BACKGROUND
A conventional DRAM cell requires expensive process steps to develop a capacitor. Moreover, a conventional dual-port DRAM requires major process changes to optimize the capacitor processing. Furthermore, compared to computer memory such as static random access memory (SRAM), the conventional DRAM is slower in speed due to the generation of charge sharing read differential.


REFERENCES:
patent: 6072713 (2000-06-01), McKenny et al.
patent: 6233193 (2001-05-01), Holland et al.
patent: 6310880 (2001-10-01), Waller
patent: 0007592 (1988-01-01), None
Betty Prince, “Semiconductor Memories”, 1983, Wiley, 2ndpp. 155 and 156.

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