1R1D MRAM block architecture

Details 1R1D MRAM block architecture 1R1D MRAM block architecture

2006-05-09

2006-05-09

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S148000, C365S171000

Reexamination Certificate

active

07042757

ABSTRACT:
This invention provides a 1R1D block architecture magnetic memory device. In a particular embodiment, a cross-point array of resistive devices is provided. Each resistive device is paired with an isolation device. A feedback controlled control circuit is coupled to the cross-point array. The control circuit establishes an equi-potential setting within the cross-point array, and recognizes a change in current when a selected resistive device within the cross-point array is asserted to a reference state. An associated method of use is further provided.

REFERENCES:
patent: 6188615 (2001-02-01), Perner et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6262625 (2001-07-01), Perner et al.
patent: 6462980 (2002-10-01), Schuster-Woldan et al.
patent: 6512688 (2003-01-01), Thewes et al.
patent: 6587384 (2003-07-01), Perner
patent: 6606262 (2003-08-01), Perner
patent: 6611452 (2003-08-01), Han
patent: 6614682 (2003-09-01), Hirai
patent: 6625057 (2003-09-01), Iwata
patent: 6816403 (2004-11-01), Brennan et al.
patent: 6847568 (2005-01-01), Gogl et al.

Affiliated with

Also associated with

Rating

1R1D MRAM block architecture does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with 1R1D MRAM block architecture, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and 1R1D MRAM block architecture will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3543826