Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2006-05-02
2006-05-02
Mai, Son (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S100000, C365S163000, C257S002000, C257S005000, C257S052000
Reexamination Certificate
active
07038935
ABSTRACT:
A 2-terminal trapped charge memory device is disclosed with voltage switchable multi-level resistance. The trapped charge memory device has a trapped charge memory body sandwiched between two electrodes. The trapped charge memory body can be made of a variety of semiconducting or insulating materials of single-crystalline, poly-crystalline or amorphous structure while containing current carrier traps whose respective energy levels and degrees of carrier occupancy, modifiable by the height and width of an applied write voltage pulse, determine the resistance. The mechanism of modification can be through carrier tunneling, free carrier capturing, trap-hopping conduction or Frenkel-Poole conduction. The current carrier traps can be created with dopant varieties or an initialization procedure.
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Chevallier Christophe J.
Hsia Steve Kuo-Ren
Kinney Wayne
Longcor Steven W.
Rinerson Darrell
Mai Son
Unity Semiconductor Corporation
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