Static information storage and retrieval – Systems using particular element – Continuous cells
Reexamination Certificate
2006-10-17
2006-10-17
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Continuous cells
C365S102000
Reexamination Certificate
active
07123500
ABSTRACT:
A two-transistor DRAM cell includes an NMOS device and a PMOS device coupled to the NMOS device.
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De Vivek K.
Keshavarzi Ali
Khellah Muhammad M.
Lu Shih-Lien L.
Paillet Fabrice
Intel Corporation
Le Thong Q.
Schwabe Williamson & Wyatt P.C.
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