Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2007-07-23
2010-02-23
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S182000, C365S176000
Reexamination Certificate
active
07668008
ABSTRACT:
The present invention relates to an 1-transistor DRAM cell, a DRAM device and a manufacturing method therefor, a driving circuit for a DRAM, a driving method therefore, and a driving method for an 1-transistor DRAM, and a double-gate type 1-transistor DRAM. The present invention comprises a data hold process biasing a word line at a negative voltage level and biasing a sensing line and a bit line at a first constant voltage level; a data purging process resetting data by biasing the word line and the bottom word line at a second constant voltage level and biasing the sensing line and the bit line at the first constant voltage level; and a data write process biasing the word line and the bottom word line at the second constant voltage level and supplying a write data to the bit line.
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Hur J. H.
Hynix / Semiconductor Inc.
Ladas & Parry LLP
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