Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2009-09-17
2011-11-22
Auduong, Gene N (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S189150, C365S148000
Reexamination Certificate
active
08064248
ABSTRACT:
A memory device as described herein includes an array of programmable resistance memory cells. The memory device further includes sense circuitry having a dual memory cell (2T-2R) mode to read a data value stored in a pair of memory cells in the array based on a difference in resistance between a first memory cell in the pair and a second memory cell in the pair. The sense circuitry also has a single memory cell (1T-1R) mode to read a data value in a particular memory cell in the array based on the resistance of the particular memory cell.
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Auduong Gene N
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
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