Reduced column leakage during programming for a flash memory arr

Reduced power programming of non-volatile cells

Reducing cross die variability in an EEPROM array

Reducing effects of program disturb in a memory device

Reducing effects of program disturb in a memory device

Reducing noise in semiconductor devices

Reducing power consumption during read operations in...

Reducing program disturb in non-volatile storage using early...

Reducing programming voltage differential nonlinearity in...

Reducing read disturb for non-volatile storage

Reducing read failure in a memory device

Reducing sneak currents in virtual ground memory arrays

Reducing the effects of noise in non-volatile memories...

Reducing the effects of noise in non-volatile memories...

Reducing the effects of noise in non-volatile memories...

Reducing the effects of noise in non-volatile memories...

Reducing the impact of program disturb

Reduction of leakage current and program disturbs in flash...

Reduction of oxide stress through the use of forward biased body

Reduction of programming time in electrically programmable...