Reducing read failure in a memory device

Details Reducing read failure in a memory device Reducing read failure in a memory device

2010-02-16

2011-11-15

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185180

Reexamination Certificate

active

08059474

ABSTRACT:
Read failure is reduced by increasing the drain current through a serial string of memory cells during the read operation. In one embodiment, this is accomplished by using a higher read pass voltage for unselected word lines when the selected word line is within a predetermined distance of the drain side of the memory block array. If the selected word line is closer to the source side, a lower read pass voltage is used. In another embodiment, the cells on the word lines closer to the drain side of the memory block array are erased to a lower threshold voltage than the memory cells on the remaining word lines.

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