Reduction of oxide stress through the use of forward biased body

Details Reduction of oxide stress through the use of forward biased body Reduction of oxide stress through the use of forward biased body

2000-01-24

2000-10-24

Elms, Richard

Static information storage and retrieval

Floating gate

Particular biasing

36518516, 36518517, G11C 1604

Patent

active

061377279

ABSTRACT:
A method of reading a flash memory (EEPROM) device by applying zero to all bitlines except for the bitline to which the cell being read is attached, applying a positive voltage to the wordline to which the cell being read is attached and applying a positive voltage to the p-well in which the cell being read is formed. A positive voltage is applied to the bitline to which the cell being read is attached.

REFERENCES:
patent: 5042009 (1991-08-01), Kazerounian et al.
patent: 5341342 (1994-08-01), Brahmbhatt
patent: 5412603 (1995-05-01), Schreck et al.
patent: 5511022 (1996-04-01), Yim et al.
patent: 5646886 (1997-07-01), Brahmbhatt
patent: 5770963 (1998-06-01), Akaogi et al.
patent: 5991203 (1999-11-01), Choi

Affiliated with

Also associated with

Rating

Reduction of oxide stress through the use of forward biased body does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Reduction of oxide stress through the use of forward biased body, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Reduction of oxide stress through the use of forward biased body will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1971551