Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-12-12
2009-11-24
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185020, C365S185170, C365S185260, C365S185280
Reexamination Certificate
active
07623386
ABSTRACT:
Program disturb is reduced in non-volatile storage by boosting unselected NAND strings in an array so that a source side channel, on a source side of a selected word line, is boosted before a drain side channel, on a drain side of the selected word line. In one approach, a first boost mode is used when the selected word line is a lower or intermediate word line. In the first boost mode, boosting of the source and drain side channels is initiated concurrently. A second boost mode is used when the selected word line is a higher word line. In the second boost mode, boosting of the source side channel occurs early relative to the boosting of the drain side channel. Either boost mode include an isolation voltage which tends to isolate the source and drain side channels from one another.
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Dong Yingda
Lutze Jeffrey W.
Hidalgo Fernando N
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
Zarabian Amir
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