Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-02-13
2007-02-13
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
11191823
ABSTRACT:
Storage elements are read multiple times and the results are accumulated and averaged for each storage element to reduce the effects of noise or other transients in the storage elements and associated circuits that may adversely affect the quality of the read. Several techniques may be employed, including: A full read and transfer of the data from the storage device to the controller device for each iteration, with averaging performed by the controller; a full read of the data for each iteration, with the averaging performed by the storage device, and no transfer to the controller until the final results are obtained; one full read followed by a number of faster re-reads exploiting the already established state information to avoid a full read, followed by an intelligent algorithm to guide the state at which the storage element is sensed. These techniques may be used as the normal mode of operation, or invoked upon exception condition, depending on the system characteristics. A similar form of signal averaging may be employed during the verify phase of programming. An embodiment of this technique would use a peak-detection scheme. In this scenario, several verify checks are performed at the state prior to deciding if the storage element has reached the target state. If some predetermined portion of the verifies fail, the storage element receives additional programming. These techniques allow the system to store more states per storage element in the presence of various sources of noise.
REFERENCES:
patent: 4630086 (1986-12-01), Sato et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5404485 (1995-04-01), Ban
patent: 5418752 (1995-05-01), Harari et al.
patent: 5457658 (1995-10-01), Niijima et al.
patent: 5471478 (1995-11-01), Mangan et al.
patent: 5603001 (1997-02-01), Sukegawa et al.
patent: 5712180 (1998-01-01), Guterman et al.
patent: 5717632 (1998-02-01), Richart et al.
patent: 5724284 (1998-03-01), Bill et al.
patent: 5768192 (1998-06-01), Eitan
patent: 5787484 (1998-07-01), Norman
patent: 5890192 (1999-03-01), Lee et al.
patent: 5892706 (1999-04-01), Shimizu et al.
patent: 6044019 (2000-03-01), Cernea et al.
patent: 6103573 (2000-08-01), Harari et al.
patent: 6148262 (2000-11-01), Fry
patent: 6222762 (2001-04-01), Guterman et al.
patent: 6246933 (2001-06-01), Bague
patent: 6621739 (2003-09-01), Gonzalez et al.
patent: 6785164 (2004-08-01), Gonzalez et al.
patent: 2001/0028576 (2001-10-01), Miwa et al.
patent: 2002/0196661 (2002-12-01), Banks
patent: 2005/0185470 (2005-08-01), Suzuki et al.
patent: 0 548 564 (1992-11-01), None
patent: 1 096 501 (2001-05-01), None
patent: WO 99/44113 (1999-09-01), None
patent: WO 01/61703 (2001-08-01), None
Pohm et al., “The Design of a One Megabit Non-Volatile M-R Memory Chip Using 1.5×5 μm Cells,”IEEE Transactions on Magnetics, vol. 24, No. 6, Nov. 1988, pp. 3117-3119.
Office Action for European Application No. 03 250 294.0 for SanDisk Corporation, Mailed Dec. 22, 2004, 4 pages.
European Search Report for European Application No. 03 250 294.0 for SanDisk Corporation, dated Apr. 17, 2003, 1 page.
International Search Report for International Application No. PCT/US 01/05052 for SanDisk Corporation, dated Apr. 15, 2002, 5 pages.
Gonzalez Carlos J.
Guterman Daniel C.
Parsons Hsue & de Runtz LLP
SanDisk Corporation
Tran Michael
LandOfFree
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