Reducing effects of program disturb in a memory device

Details Reducing effects of program disturb in a memory device Reducing effects of program disturb in a memory device

2007-10-05

2009-11-17

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185020, C365S185180, C365S185330

Reexamination Certificate

active

07619933

ABSTRACT:
The programming disturb effects in a semiconductor non-volatile memory device are reduced by biasing unselected word lines of a memory block with a negative voltage followed by a positive Vpassvoltage. The selected word lines are biased with a programming voltage. In one embodiment, the programming voltage is preceded by a negative voltage.

REFERENCES:
patent: 5295106 (1994-03-01), Jinbo
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5661683 (1997-08-01), Song
patent: 5715194 (1998-02-01), Hu
patent: 6061270 (2000-05-01), Choi
patent: 6477088 (2002-11-01), Ogura et al.
patent: 6731544 (2004-05-01), Han et al.
patent: 6747899 (2004-06-01), Hsia et al.
patent: 6807104 (2004-10-01), Arai et al.
patent: 6956770 (2005-10-01), Khalid et al.
patent: 7057931 (2006-06-01), Lutze et al.
patent: 7139198 (2006-11-01), Guterman et al.
patent: 7212435 (2007-05-01), Rudeck et
patent: 7254084 (2007-08-01), Terasawa et al.
patent: 7298651 (2007-11-01), Zhang
patent: 7433233 (2008-10-01), Chen et al.
patent: 2001/0050442 (2001-12-01), Lee
patent: 2002/0118569 (2002-08-01), Jeong et al.
patent: 2004/0233725 (2004-11-01), Iwase et al.
patent: 2005/0243602 (2005-11-01), Umezawa
patent: 2005/0254309 (2005-11-01), Kwon et al.
patent: 2007/0109870 (2007-05-01), Kurata et al.

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