LandOfFree - US Patents - Listing for Single-crystal, oriented-crystal, and epitaxy growth processes;

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – With means for measuring – testing – or sensing

Method and apparatus of generating PDMAT precursor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing

Method and apparatus of generating PDMAT precursor

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus of growing a thin film

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state

Method and apparatus of growing a thin film onto a substrate

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

Method and apparatus of growing silicon single crystal and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Method and apparatus of growing silicon single crystal and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Method and apparatus of growing silicon single crystal and...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and apparatus using organic vapor phase deposition for th

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for depositing in particular organic...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for epitaxial deposition of atoms or...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Method and device for feeding arsenic dopant into a silicon...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Method and device for manufacturing single crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With pretreatment or preparation of a base

Method and device for manufacturing spherical semiconductor...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for producing an electronic GaAs detector...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step of heat treating...

Method and device for producing monocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state

Method and device for producing optical fluoride crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Method and device for producting monocrystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor

Method and device for regulating the differential pressure...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state

Method and device for separating a substance from a liquid mixtu