Method and apparatus of growing a thin film

Details Method and apparatus of growing a thin film Method and apparatus of growing a thin film

2006-06-13

2006-06-13

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S084000, C117S088000, C117S089000, C117S102000, C117S105000

Reexamination Certificate

active

07060132

ABSTRACT:
A method and apparatus for growing a thin film onto a substrate is disclosed. According to one embodiment, a plurality of substrates, each having a width and a length, are placed in a reaction space and the substrates are subjected to surface reactions of vapor-phase reactants according to the ALD method to form a thin film on the surfaces of the substrates. The reaction space comprises an elongated gas channel having a cross-section with a width greater that the height and which has a length which is at least 2 times greater than the length of one substrate in the direction of the gas flow in the channel, the channel having a folded configuration with at least one approximately 180 degree turn in the direction of the gas flow.

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