Method and apparatus using organic vapor phase deposition for th

Details Method and apparatus using organic vapor phase deposition for th Method and apparatus using organic vapor phase deposition for th

1995-05-19

1996-09-10

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 91, 117 99, 117102, 117104, 117925, 117926, 117927, C30B 2954

Patent

active

055542204

ABSTRACT:
In a method using organic vapor phase deposition (OCPD), for the growth of thin films of optically nonlinear organic salts, a volatile precursor of each component of the salt is carried as a vapor to a hot-wall reaction chamber by independently controlled streams of carrier gas. The components react to form a polycrystalline thin film on substrates of glass and gold. Excess reactants and reaction products are purged from the system by the carrier gas. For example, the method provides the growth of polycrystalline, optically nonlinear thin films of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) with >95% purity.

REFERENCES:
patent: 4684598 (1987-08-01), Petember et al.
patent: 4731756 (1988-03-01), Potember et al.
patent: 5139592 (1992-08-01), Debe
patent: 5256595 (1993-10-01), Flemish et al.
patent: 5323482 (1994-06-01), Stewart et al.
Y. S. Ban and D. Rodefeld; J. R. Flemish and K. A. Jones, High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot-wall reactor; Appl. Phys. Lett. 62(2), 11 Jan. 1993, pp. 160-162.

Affiliated with

Also associated with

Rating

Method and apparatus using organic vapor phase deposition for th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus using organic vapor phase deposition for th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus using organic vapor phase deposition for th will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1317763