Method and device for producing monocrystals

Details Method and device for producing monocrystals Method and device for producing monocrystals

1997-05-09

1999-09-14

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

117 35, 117217, C30B 1514

Patent

active

059517530

ABSTRACT:
A method for producing a silicon monocrystal has a growing monocrystal kept for a specified dwell time in the specified temperature range of from 850.degree. C. to 1100.degree. C. This dwell time for the growing monocrystal in the chosen temperature range is either greater than 250 min or less than 80 min. A device and a method, in which the cooling rate of the growing monocrystal is to be influenced, has a heat shield which is subdivided into adjacent annular zones between a lower rim and an upper rim. These adjacent zones differ in regard to each's thermal conduction and transparency to heat radiation.

REFERENCES:
patent: 3342559 (1967-09-01), Dermatis
patent: 4597949 (1986-07-01), Yasinsui et al.
patent: 4784715 (1988-11-01), Stoll
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4981549 (1991-01-01), Yamashita et al.
patent: 5575847 (1996-11-01), Kuramuchi et al.
Derwent Abstract Corresponding to DE-3905626 (#89-257051).
Patent Abstract of Japan (05330975).
Patent Abstract of Japan (03153595).
Recognition of D dejects in Silicon Single Crystals by Preferential Etching nd Effect on Gate Oxide Integrity H. Yamagishi et al Semicond. Sci. Technol. 7 (1992) A 135-A 140, Printed in the UK.
Global Modelling of Heat transfer in Crystal Growth Furnaces, F. Dupret, Int. J. Heat Mass Transfer vol. 33, , No. 9, pp. 1849-1871, 1990 Printed in Great Britain.

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